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Provisional Data Sheet No. PD-9.1447
REPETITIVE AVALANCHE AND dv/dt RATED
IRHNA9064
PC A N L -HNE
HEXFET
(R)
TRANSISTOR
RADHARD
-60Volt, 0.055 RAD HARD HEXFET 0.055,
International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Product Summary
Part Number IRHNA9064 BVDSS -60V RDS(on) 0.055 ID -48A
Features:
n n n n n n n n n n n n n
Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight
Pre-Radiation
IRHNA9064
-48 -30 -192 300 2.4 20 500 -48 30 -5.5 -55 to 150 300 (For 5 sec) 3.3 (typical)
Units A
W W/K V mJ A mJ V/ns
o
C
g
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IRHNA9064
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Pre-Radiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS /TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-60 -- -- -- -2.0 16 -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.048 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 8.7 -- -- 0.055 0.065 -4.0 -- -25 -250 -100 100 260 60 86 62 227 200 115 -- -- V V/C V S( ) A
Test Conditions
VGS =0 V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -30A VGS = -12V, ID = -48A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -30A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS =-20 V VGS = 20V VGS = -12V, ID = -48A VDS = Max Rating x 0.5 VDD = -30V, ID = -48A, RG = 2.35
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nA nC
ns
nH
Measured from drain lead, Modified MOSFET symbol show6mm (0.25 in) from package ing the internal inductances. to center of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad.
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
7400 3200 540
-- -- --
pF
VGS = 0V, VDS = -25 V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS I SM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -48 -192 -3.0 480 3.7
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25C, IS = -48A, VGS = 0V Tj = 25C, IF = -48A, di/dt -100A/s VDD -50V
A
V ns C
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max
-- -- -- 0.42 TBD --
Units
K/W
Test Conditions
Soldered to a copper-clad PC board
* Limited by Pin diameter
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IRHNA9064
Radiation Performance of P-Channel Rad Hard HEXFETs
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Radiation Characteristics
International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used.
Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si) no changes in limits are specified in DC parameters. High dose rate testing may be done on a special request basis using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier radiation hardened P-Channel HEXFETs have been characterized in heavy ion Single Event Effects (SEE) environments and the results are shown in Table 3.
Table 1. Low Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD
IRHNA9064
100K Rads (Si) Units
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS = -20V VGS = 20V VDS=0.8 x Max Rating, VGS=0V VGS = -12V, ID = -30A TC = 25C, IS = -48A,VGS = 0V
Min Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Max -- -4.0 -100 100 -25 0.055 -3.0 V nA A V
-60 -2.0 -- -- -- -- --
Table 2. High Dose Rate
Parameter
VDSS IPP di/dt L1
Min Typ Max -- -- -48 -- --
Min Typ Max -- -- -48 -- --
Units
V
Test Conditions
Drain-to-Source Voltage
-- -100 -- -800 0.1 --
-- -100 -- -160 0.8 --
Applied drain-to-source voltage during gamma-dot A Peak radiation induced photo-current A/sec Rate of rise of photo-current H Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter
BVDSS
Typical
-60
Units
V
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
1 x 10 5
Range (m)
~41
VDS Bias (V)
-60
VGS Bias (V)
5
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IRHNA9064
Repetitive Rating; Pulse width limited by
maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = -25V, Starting TJ = 25C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = -48A, VGS = -12 V, 25 RG 200 ISD -48A, di/dt -170 A/s, VDD BV DSS, T J 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
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Pre-Radiation
Total Dose Irradiation with VGS Bias.
-12 volt V GS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and V GS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications.

Case Outline and Dimensions --
1 3 .48 (.5 3 1 ) 1 3 .19 (.5 1 9 ) -A 0. 15 ( . 00 6 ) -C 3 S U RF A C E S 3 .6 0 (. 14 2 ) M A X. 11 .3 2 (.4 46 ) 11 .0 3 (.4 34 )
5 17 .6 7 (. 69 6 ) 17 .3 8 (. 68 4 ) -B 1 2. 21 (.4 81 ) 1 1. 92 (.4 69 ) 0.8 9 (.03 5 ) M IN . 4 2 5 2 X 3 .70 (.1 4 6 ) 3 .41 (.1 3 4 ) 0 .3 6 ( .0 14 ) N O TE S : 1 . D IM E N S IO N & T O LE R A N C E P E R A N S I Y 1 4 .91 -1 98 2 2 . C O N T R O LL IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ). 4 . D IM E N S IO N IN C L U D E S M E T A L L IZ A T IO N F LA S H . 5 . D IM E N S IO N D O E S N O T IN C LU D E M E T A LL IZ A T IO N F LA S H . M CAMB M 3 4.1 4 (.1 63 ) 3.8 4 (.1 51 ) 5 1 .27 (.0 5 0 ) M IN . 4
0.3 8 (.0 15 ) 3X 0.1 3 (.0 05 )
3. 05 (.1 20 ) 6 .1 0 (.24 0 )
L E A D A S S IG N M E N T S 1 = D R A IN 2 = G A TE 3 = S O U R CE
SMD-2
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